IPP60R099C7XKSA1

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

42nC @ 10V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.099Ohm

Ambalaj

Tube

Current Continuous Drain Id25

22A Tc

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Rds On Max Id Vgs

99m Ω @ 9.7A, 10V

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1819pF @ 400V

Continuous Drain Current Id

22A

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

97 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

Kurşunsuz

Lead Free

Case Connection

DRAIN

Max Dual Supply Voltage

600V

Kılıf / Paket

TO-220-3

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Pulsed Drain Currentmax Idm

83A

Vgsth Max Id

4V @ 490μA

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSFM-T3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)