IPP60R080P7XKSA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Seri

CoolMOS™ P7

Parça Durumu

Active

Power Dissipation Max

129W Tc

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

110A

Vgsth Max Id

4V @ 590μA

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

118 mJ

Vgs Max

±20V

Montaj Tipi

Through Hole

Case Connection

DRAIN

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

2180pF @ 400V

Transistor Element Material

SILICON

Rds On Max Id Vgs

80m Ω @ 11.8A, 10V

Terminal Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

37A Tc

Gate Charge Qg Max Vgs

51nC @ 10V

Drainsource On Resistancemax

0.08Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

600V

JESD-609 Kodu

e3