IPP50R520CPXKSA1

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

7.1A Tc

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

17nC @ 10V

Kurşunsuz Kodu

yes

Element Configuration

Single

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Fall Time Typ

17 ns

Input Capacitance Ciss Max Vds

680pF @ 100V

Rise Time

14ns

Case Connection

ISOLATED

Montaj Tipi

Through Hole

Pin Sayısı

3

Avalanche Energy Rating Eas

166 mJ

Jedec95 Code

TO-220AB

Power Dissipation

66W

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Qualification Status

Not Qualified

Pulsed Drain Currentmax Idm

15A

Vgsth Max Id

3.5V @ 250μA

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.52Ohm

Drain To Source Breakdown Voltage

550V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Continuous Drain Current Id

7.1A

Terminal Sayısı

3

Turn Off Delay Time

80 ns

Rds On Max Id Vgs

520m Ω @ 3.8A, 10V

Kılıf / Paket

TO-220-3