IPP50R280CEXKSA1

Teknik Özellikler

Pulsed Drain Currentmax Idm

42.9A

Vgsth Max Id

3.5V @ 350μA

Montaj

Through Hole

Power Dissipation Max

92W Tc

Parça Durumu

Active

Seri

CoolMOS™

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Super Junction

Turn On Delay Time

8 ns

Rise Time

6.4ns

Kılıf / Paket

TO-220-3

Max Dual Supply Voltage

500V

Kurşunsuz

Lead Free

Pin Sayısı

3

Vgs Max

±20V

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

13V

Fall Time Typ

7.6 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Rds On Max Id Vgs

280m Ω @ 4.2A, 13V

Turn Off Delay Time

40 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

13A

Input Capacitance Ciss Max Vds

773pF @ 100V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)