IPP110N20N3GXKSA1

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

88A Tc

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

87nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Fall Time Typ

11 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

7100pF @ 100V

Max Junction Temperature Tj

175°C

Avalanche Energy Rating Eas

560 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Pin Sayısı

3

Rise Time

26ns

Power Dissipation

300W

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Yükseklik

20.7mm

Vgsth Max Id

4V @ 270μA

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2006

Terminal Pozisyonu

SINGLE

Number Of Channels

1

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

200V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Continuous Drain Current Id

88A

Transistor Element Material

SILICON

Rds On Max Id Vgs

11m Ω @ 88A, 10V

Turn Off Delay Time

41 ns