IPP100N08S207AKSA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

30 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Rds On Max Id Vgs

7.1m Ω @ 80A, 10V

Turn Off Delay Time

61 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

100A

Input Capacitance Ciss Max Vds

4700pF @ 25V

JESD-609 Kodu

e3

Radyasyon Dayanımı

No

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

200nC @ 10V

Current Continuous Drain Id25

100A Tc

Pulsed Drain Currentmax Idm

400A

Vgsth Max Id

4V @ 250μA

Montaj

Through Hole

Power Dissipation Max

300W Tc

Parça Durumu

Active

Seri

OptiMOS™

Yayın Yılı

2006

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

26 ns

Power Dissipation

300W

Kılıf / Paket

TO-220-3

Rise Time

51ns

Max Dual Supply Voltage

75V

Kurşunsuz

Contains Lead

Montaj Tipi

Through Hole

Vgs Max

±20V

Jedec95 Code

TO-220AB

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant