IPP075N15N3GXKSA1

Teknik Özellikler

Rds On Max Id Vgs

7.5m Ω @ 100A, 10V

Turn Off Delay Time

46 ns

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

5470pF @ 75V

Continuous Drain Current Id

100A

Transistor Element Material

SILICON

Fall Time Typ

14 ns

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

8V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

93nC @ 10V

Drainsource On Resistancemax

0.0075Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

100A Tc

Terminal Kaplaması

Tin (Sn)

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Seri

OptiMOS™

Turn On Delay Time

25 ns

Pulsed Drain Currentmax Idm

400A

Vgsth Max Id

4V @ 270μA

Parça Durumu

Active

Power Dissipation Max

300W Tc

Montaj

Through Hole

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Power Dissipation

300W

Avalanche Energy Rating Eas

780 mJ