IPP062NE7N3GXKSA1

Teknik Özellikler

JESD-609 Kodu

e3

Radyasyon Dayanımı

No

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0062Ohm

Gate Charge Qg Max Vgs

55nC @ 10V

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

80A Tc

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Fall Time Typ

10 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Turn Off Delay Time

24 ns

Rds On Max Id Vgs

6.2m Ω @ 73A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

80A

Input Capacitance Ciss Max Vds

3840pF @ 37.5V

Power Dissipation

136W

Rise Time

48ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Max Dual Supply Voltage

75V

Montaj Tipi

Through Hole

Vgs Max

±20V

Pin Sayısı

3

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Vgsth Max Id

3.8V @ 70μA

Pulsed Drain Currentmax Idm

320A

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

136W Tc