IPP060N06NAKSA1

Teknik Özellikler

Fall Time Typ

7 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

6V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

60V

Fet Type

N-Channel

Terminal Sayısı

3

Rds On Max Id Vgs

6m Ω @ 45A, 10V

Turn Off Delay Time

20 ns

Input Capacitance Ciss Max Vds

2000pF @ 30V

Transistor Element Material

SILICON

Continuous Drain Current Id

45A

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

27nC @ 10V

Kurşunsuz Kodu

no

Ambalaj

Tube

Drainsource On Resistancemax

0.006Ohm

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

17A Ta 45A Tc

Vgsth Max Id

2.8V @ 36μA

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

3W Ta 83W Tc

Seri

OptiMOS™

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

83W

Pin Sayısı

3

Vgs Max

±20V

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

60 mJ

Kılıf / Paket

TO-220-3