IPP052N08N5AKSA1

Teknik Özellikler

Rds On Max Id Vgs

5.2m Ω @ 80A, 10V

Turn Off Delay Time

27 ns

Terminal Sayısı

3

Continuous Drain Current Id

80A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3770pF @ 40V

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

7 ns

Fet Type

N-Channel

Weight

6.000006g

Drainsource On Resistancemax

0.0052Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

53nC @ 10V

Current Continuous Drain Id25

80A Tc

Number Of Channels

1

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

Seri

OptiMOS™

Turn On Delay Time

17 ns

Pulsed Drain Currentmax Idm

320A

Vgsth Max Id

3.8V @ 66μA

Montaj

Through Hole

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSFM-T3

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Max Dual Supply Voltage

80V