IPP048N12N3GXKSA1

Teknik Özellikler

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Rds On Max Id Vgs

4.8m Ω @ 100A, 10V

Turn Off Delay Time

64 ns

Terminal Sayısı

3

Continuous Drain Current Id

100A

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.0048Ohm

Parça Durumu

Active

Power Dissipation Max

300W Tc

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Turn On Delay Time

31 ns

Vgs Max

±20V

Max Dual Supply Voltage

120V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Pin Sayısı

3

Fall Time Typ

19 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

12000pF @ 60V

Terminal Kaplaması

Tin (Sn)

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

182nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

100A Tc

Pulsed Drain Currentmax Idm

400A

Vgsth Max Id

4V @ 230μA

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008