IPP048N04NGXKSA1

Teknik Özellikler

Fall Time Typ

4 ns

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Rds On Max Id Vgs

4.8m Ω @ 70A, 10V

Turn Off Delay Time

19 ns

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

3300pF @ 25V

Continuous Drain Current Id

70A

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

41nC @ 10V

Drainsource On Resistancemax

0.0048Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

70A Tc

Pulsed Drain Currentmax Idm

400A

Vgsth Max Id

4V @ 200μA

Qualification Status

Not Qualified

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

79W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

OptiMOS™

Yayın Yılı

2008

Turn On Delay Time

13 ns

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

Pin Sayısı

3

Max Dual Supply Voltage

40V