IPP040N06N3GXKSA1

Teknik Özellikler

Rds On Max Id Vgs

4m Ω @ 90A, 10V

Turn Off Delay Time

40 ns

Terminal Sayısı

3

Continuous Drain Current Id

90A

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.004Ohm

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Turn On Delay Time

30 ns

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

188W Tc

Pin Sayısı

3

Additional Feature

AVALANCHE RATED

Vgs Max

±20V

Kurşunsuz

Lead Free

Max Dual Supply Voltage

60V

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

11000pF @ 30V

Fall Time Typ

5 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

98nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

90A Tc

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Vgsth Max Id

4V @ 90μA

Qualification Status

Not Qualified