IPP039N10N5AKSA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

100V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

6V 10V

Input Capacitance Ciss Max Vds

7000pF @ 50V

Transistor Element Material

SILICON

Terminal Sayısı

3

Rds On Max Id Vgs

3.9m Ω @ 50A, 10V

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

100V

Current Continuous Drain Id25

100A Tc

Gate Charge Qg Max Vgs

95nC @ 10V

Drain Currentmax Abs Id

100A

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0039Ohm

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

188W Tc

Pulsed Drain Currentmax Idm

400A

Vgsth Max Id

3.8V @ 125μA

Seri

OptiMOS™

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

196 mJ

Jedec95 Code

TO-220AB

Kılıf / Paket

TO-220-3

Case Connection

DRAIN

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant