IPP034N08N5AKSA1

Teknik Özellikler

Turn On Delay Time

18 ns

Yayın Yılı

2013

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

167W Tc

Montaj

Through Hole

Vgsth Max Id

3.8V @ 108μA

Pulsed Drain Currentmax Idm

480A

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Vgs Max

±20V

Jedec95 Code

TO-220AB

Rise Time

12ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Contains Lead

Case Connection

DRAIN

Max Dual Supply Voltage

80V

Input Capacitance Ciss Max Vds

6240pF @ 40V

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Terminal Sayısı

3

Turn Off Delay Time

37 ns

Rds On Max Id Vgs

3.4m Ω @ 100A, 10V

Weight

6.000006g

Fet Type

N-Channel

Drain To Source Breakdown Voltage

80V

Fall Time Typ

12 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Current Continuous Drain Id25

120A Tc

Gate Charge Qg Max Vgs

87nC @ 10V