IPP032N06N3GXKSA1

Teknik Özellikler

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

165nC @ 10V

Current Continuous Drain Id25

120A Tc

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Fall Time Typ

20 ns

Fet Type

N-Channel

Drain To Source Breakdown Voltage

60V

Rds On Max Id Vgs

3.2m Ω @ 100A, 10V

Turn Off Delay Time

62 ns

Terminal Sayısı

3

Continuous Drain Current Id

120A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

13000pF @ 30V

Power Dissipation

188W

Kurşunsuz

Lead Free

Max Dual Supply Voltage

60V

Rise Time

120ns

Kılıf / Paket

TO-220-3

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Vgsth Max Id

4V @ 118μA

Pulsed Drain Currentmax Idm

480A

Power Dissipation Max

188W Tc