IPP027N08N5AKSA1

Teknik Özellikler

Drainsource On Resistancemax

0.0027Ohm

Number Of Channels

1

JESD-609 Kodu

e3

Turn Off Delay Time

46 ns

Rds On Max Id Vgs

2.7m Ω @ 100A, 10V

Terminal Sayısı

3

Continuous Drain Current Id

120A

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Weight

6.000006g

Drain To Source Breakdown Voltage

80V

Vgs Max

±20V

Max Dual Supply Voltage

80V

Kurşunsuz

Contains Lead

Kılıf / Paket

TO-220-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Turn On Delay Time

22 ns

Parça Durumu

Active

Power Dissipation Max

214W Tc

Montaj

Through Hole

Element Configuration

Single

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

123nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

120A Tc

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

8970pF @ 40V

Fall Time Typ

15 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1