IPP023N08N5AKSA1

Teknik Özellikler

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

300W Tc

Montaj

Through Hole

Parça Durumu

Active

Vgsth Max Id

3.8V @ 208μA

Pulsed Drain Currentmax Idm

480A

Turn On Delay Time

28 ns

Yayın Yılı

2013

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

16ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Contains Lead

Case Connection

DRAIN

Max Dual Supply Voltage

80V

Montaj Tipi

Through Hole

Vgs Max

±20V

Avalanche Energy Rating Eas

674 mJ

Jedec95 Code

TO-220AB

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Fet Type

N-Channel

Weight

6.000006g

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Fall Time Typ

20 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Input Capacitance Ciss Max Vds

12100pF @ 40V

Terminal Sayısı

3

Turn Off Delay Time

62 ns

Rds On Max Id Vgs

2.3m Ω @ 100A, 10V

Number Of Channels

1

Current Continuous Drain Id25

120A Tc