IPL65R210CFDAUMA1

Teknik Özellikler

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Continuous Drain Current Id

16.6A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1850pF @ 100V

Rds On Max Id Vgs

210m Ω @ 7.3A, 10V

Terminal Sayısı

4

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

16.6A Tc

Drainsource On Resistancemax

0.21Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

68nC @ 10V

Montaj

Surface Mount

Power Dissipation Max

151W Tc

Parça Durumu

Active

Pulsed Drain Currentmax Idm

53A

Vgsth Max Id

4.5V @ 700μA

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

Seri

CoolMOS™

Max Dual Supply Voltage

650V

Case Connection

DRAIN

Kurşunsuz

Contains Lead

Kılıf / Paket

4-PowerTSFN

Vgs Max

±20V

Montaj Tipi

Surface Mount

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4