IPL65R195C7AUMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

CoolMOS™ C7

Yayın Yılı

2013

Vgsth Max Id

4V @ 290μA

Montaj

Surface Mount

Power Dissipation Max

75W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Max Dual Supply Voltage

650V

Case Connection

DRAIN

Kurşunsuz

Contains Lead

Kılıf / Paket

4-PowerTSFN

Avalanche Energy Rating Eas

57 mJ

Vgs Max

±20V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

195m Ω @ 2.9A, 10V

Terminal Sayısı

4

Continuous Drain Current Id

12A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1150pF @ 400V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.195Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

23nC @ 10V

Current Continuous Drain Id25

12A Tc

JESD-609 Kodu

e3