IPL65R165CFDAUMA1

Teknik Özellikler

Pulsed Drain Currentmax Idm

67A

Vgsth Max Id

4.5V @ 900μA

Montaj

Surface Mount

Power Dissipation Max

195W Tc

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Seri

CoolMOS™

Yayın Yılı

2013

Max Dual Supply Voltage

650V

Case Connection

DRAIN

Kurşunsuz

Contains Lead

Kılıf / Paket

4-PowerTSFN

Montaj Tipi

Surface Mount

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

165m Ω @ 9.3A, 10V

Terminal Sayısı

4

Continuous Drain Current Id

21.3A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2340pF @ 100V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.165Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

86nC @ 10V