IPL60R650P6SATMA1

Teknik Özellikler

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Weight

75.891673mg

REACH Uyumluluk Kodu

not_compliant

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

14 ns

Terminal Formu

NO LEAD

Continuous Drain Current Id

6.7A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

557pF @ 100V

Turn Off Delay Time

33 ns

Rds On Max Id Vgs

650m Ω @ 2.4A, 10V

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Number Of Channels

1

Current Continuous Drain Id25

6.7A Tc

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.65Ohm

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Element Configuration

Single

Gate Charge Qg Max Vgs

12nC @ 10V

Power Dissipation Max

56.8W Tc

Montaj

Surface Mount

Jesd30 Code

R-PDSO-N5

Parça Durumu

Active

Vgsth Max Id

4.5V @ 200μA

Turn On Delay Time

11 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Seri

CoolMOS™ P6

Kurşunsuz

Contains Lead

Case Connection

DRAIN

Max Dual Supply Voltage

600V

Rise Time

7ns