IPL60R125P7AUMA1

Teknik Özellikler

Rds On Max Id Vgs

125m Ω @ 8.2A, 10V

Terminal Sayısı

4

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1544pF @ 400V

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.125Ohm

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

36nC @ 10V

Current Continuous Drain Id25

27A Tc

Drain To Source Voltage Vdss

650V

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Yayın Yılı

2014

Seri

CoolMOS™ P7

Vgsth Max Id

4V @ 410μA

Pulsed Drain Currentmax Idm

78A

Power Dissipation Max

111W Tc

Jesd30 Code

S-PSSO-N4

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

Kılıf / Paket

4-PowerTSFN

Avalanche Energy Rating Eas

82 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V