IPL60R085P7AUMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

3 (168 Hours)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Seri

CoolMOS™ P7

Pulsed Drain Currentmax Idm

110A

Vgsth Max Id

4V @ 590μA

Parça Durumu

Active

Power Dissipation Max

154W Tc

Jesd30 Code

S-PSSO-N4

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Avalanche Energy Rating Eas

118 mJ

Vgs Max

±20V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

4-PowerTSFN

Rds On Max Id Vgs

85m Ω @ 11.8A, 10V

Terminal Sayısı

4

Input Capacitance Ciss Max Vds

2180pF @ 400V

Transistor Element Material

SILICON

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-40°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Gate Charge Qg Max Vgs

51nC @ 10V

Drainsource On Resistancemax

0.085Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

39A Tc

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

650V

JESD-609 Kodu

e3