IPL60R075CFD7AUMA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

151 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

4-PowerTSFN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Yayın Yılı

2014

Seri

CoolMOS™ CFD7

Parça Durumu

Active

Power Dissipation Max

189W Tc

Jesd30 Code

S-PSSO-N4

Vgsth Max Id

4.5V @ 760μA

Pulsed Drain Currentmax Idm

129A

Current Continuous Drain Id25

33A Tc

Drain Currentmax Abs Id

33A

Gate Charge Qg Max Vgs

67nC @ 10V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.075Ohm

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

650V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

2721pF @ 400V

Transistor Element Material

SILICON

Rds On Max Id Vgs

75m Ω @ 15.1A, 10V

Terminal Sayısı

4

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Terminal Formu

NO LEAD

Ds Breakdown Voltagemin

600V

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99