IPL60R065P7AUMA1

Teknik Özellikler

Power Dissipation

201W

Vgs Max

±20V

Montaj Tipi

Surface Mount

Kılıf / Paket

4-PowerTSFN

Case Connection

DRAIN

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Vgsth Max Id

4V @ 800μA

Parça Durumu

Active

Jesd30 Code

S-PSSO-N4

Power Dissipation Max

201W Tc

Seri

CoolMOS™ P7

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Turn On Delay Time

16 ns

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Number Of Channels

1

Drain To Source Voltage Vdss

650V

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

67nC @ 10V

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.065Ohm

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

41A Tc

Terminal Formu

NO LEAD

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-40°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Drain To Source Breakdown Voltage

600V

Fet Type

N-Channel