IPI80N06S208AKSA2

Teknik Özellikler

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 150μA

Terminal Sayısı

3

Fet Type

N-Channel

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Power Dissipation Max

215W Tc

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

80A

Kurşunsuz

Lead Free

Ambalaj

Tube

Fabrika Tedarik Süresi

10 Weeks

Rise Time

15ns

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Fall Time Typ

14 ns

Rds On Max Id Vgs

8m Ω @ 58A, 10V

Gate Charge Qg Max Vgs

96nC @ 10V

Input Capacitance Ciss Max Vds

2860pF @ 25V

Drainsource On Resistancemax

0.008Ohm

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2006

Turn Off Delay Time

32 ns

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Number Of Elements

1

Avalanche Energy Rating Eas

450 mJ

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

80A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Radyasyon Dayanımı

No

Max Dual Supply Voltage

55V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Vgs Max

±20V