IPI65R099C6XKSA1

Teknik Özellikler

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

115A

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.5V @ 1.2mA

Kurşunsuz Kodu

yes

Power Dissipation Max

278W Tc

Fet Type

N-Channel

Halogen Free

Halogen Free

Continuous Drain Current Id

38A

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

127nC @ 10V

Input Capacitance Ciss Max Vds

2780pF @ 100V

Drainsource On Resistancemax

0.099Ohm

Ambalaj

Tube

Fabrika Tedarik Süresi

12 Weeks

Rise Time

9ns

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Fall Time Typ

6 ns

Rds On Max Id Vgs

99m Ω @ 12.8A, 10V

Yayın Yılı

2008

Turn Off Delay Time

77 ns

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

RoHS Durumu

RoHS Compliant

Avalanche Energy Rating Eas

845 mJ

Pin Sayısı

3

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

650V

Transistor Application

SWITCHING

Montaj

Through Hole

Current Continuous Drain Id25

38A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA