IPI600N25N3GAKSA1

Teknik Özellikler

Power Dissipation

136W

Vgs Max

±20V

Turn On Delay Time

10 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

250V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

25A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Sayısı

3

Number Of Elements

1

Yayın Yılı

2008

Turn Off Delay Time

22 ns

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSIP-T3

Gate Charge Qg Max Vgs

29nC @ 10V

Input Capacitance Ciss Max Vds

2350pF @ 100V

Drainsource On Resistancemax

0.06Ohm

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Fall Time Typ

8 ns

Montaj Tipi

Through Hole

Rds On Max Id Vgs

60m Ω @ 25A, 10V

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

25A

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

no

JESD-609 Kodu

e3