IPI50R399CPXKSA1

Teknik Özellikler

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Power Dissipation Max

83W Tc

JESD-609 Kodu

e3

Vgsth Max Id

3.5V @ 330μA

Drain To Source Voltage Vdss

500V

Drain Currentmax Abs Id

9A

Pulsed Drain Currentmax Idm

20A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Terminal Sayısı

3

Montaj Tipi

Through Hole

Rds On Max Id Vgs

399m Ω @ 4.9A, 10V

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.399Ohm

Gate Charge Qg Max Vgs

23nC @ 10V

Input Capacitance Ciss Max Vds

890pF @ 100V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Not For New Designs

Drive Voltage Max Rds On Min Rds On

10V

Number Of Elements

1

Pin Sayısı

3

Avalanche Energy Rating Eas

215 mJ

Jesd30 Code

R-PSIP-T3

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2008

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

9A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Ds Breakdown Voltagemin

500V

ECCN Kodu

EAR99