IPI120N04S401AKSA1

Teknik Özellikler

Gate Charge Qg Max Vgs

176nC @ 10V

Input Capacitance Ciss Max Vds

14000pF @ 25V

Drainsource On Resistancemax

0.0019Ohm

Ambalaj

Tube

Fabrika Tedarik Süresi

16 Weeks

Operating Mode

ENHANCEMENT MODE

Rise Time

16ns

Fall Time Typ

36 ns

Montaj Tipi

Through Hole

Rds On Max Id Vgs

1.9m Ω @ 100A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

120A

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Power Dissipation Max

188W Tc

Fet Type

N-Channel

Halogen Free

Halogen Free

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

480A

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 140μA

Vgs Max

±20V

Turn On Delay Time

34 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

40V

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

120A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Avalanche Energy Rating Eas

750 mJ

Number Of Elements

1

Yayın Yılı

2010

Turn Off Delay Time

41 ns

Gate To Source Voltage Vgs

20V