IPI076N12N3GAKSA1

Teknik Özellikler

Power Dissipation

188W

Turn On Delay Time

24 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

230 mJ

Number Of Elements

1

Turn Off Delay Time

39 ns

Input Capacitance Ciss Max Vds

6640pF @ 60V

Rise Time

50ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Continuous Drain Current Id

100A

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

188W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

no

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

400A

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Qualification Status

Not Qualified

Max Dual Supply Voltage

120V

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

100A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Sayısı

3

Yayın Yılı

2008

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSIP-T3

Gate Charge Qg Max Vgs

101nC @ 10V

Drainsource On Resistancemax

0.0076Ohm

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks