IPI029N06NAKSA1

Teknik Özellikler

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

24A Ta 100A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Montaj

Through Hole

ECCN Kodu

EAR99

Max Dual Supply Voltage

60V

Halogen Free

Halogen Free

Vgsth Max Id

2.8V @ 75μA

Drain Currentmax Abs Id

24A

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Fall Time Typ

8 ns

Rds On Max Id Vgs

2.9m Ω @ 100A, 10V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0029Ohm

Gate Charge Qg Max Vgs

56nC @ 10V

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

6V 10V

Kurşunsuz

Contains Lead

Number Of Elements

1

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

30 ns

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

136W

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N-Channel

Kurşunsuz Kodu

no

Power Dissipation Max

3W Ta 136W Tc

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

400A