IPDD60R050G7XTMA1

Teknik Özellikler

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

50m Ω @ 15.9A, 10V

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.05Ohm

Gate Charge Qg Max Vgs

68nC @ 10V

Input Capacitance Ciss Max Vds

2670pF @ 400V

Number Of Channels

1

Yükseklik

2.5mm

Jedec95 Code

TO-252

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

47A

Fet Type

N-Channel

Power Dissipation Max

278W Tc

Vgsth Max Id

4V @ 800μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ G7

Terminal Sayısı

10

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

22 ns

Max Junction Temperature Tj

150°C

Power Dissipation

278W

Vgs Max

±20V

Current Continuous Drain Id25

47A Tc

Kılıf / Paket

10-PowerSOP Module

Transistor Application

SWITCHING

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

600V

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

72 ns