IPD80R750P7ATMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ P7

Pulsed Drain Currentmax Idm

17A

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 140μA

Terminal Sayısı

2

Fet Type

N-Channel

JESD-609 Kodu

e3

Power Dissipation Max

51W Tc

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-252AA

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

750m Ω @ 2.7A, 10V

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

460pF @ 500V

Gate Charge Qg Max Vgs

17nC @ 10V

Drainsource On Resistancemax

0.75Ohm

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Yayın Yılı

2014

Number Of Elements

1

Avalanche Energy Rating Eas

16 mJ

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

800V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

7A Tc

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)