IPD78CN10NGATMA1

Teknik Özellikler

Turn Off Delay Time

13 ns

Number Of Elements

1

Avalanche Energy Rating Eas

17 mJ

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

9 ns

Power Dissipation

31W

Pulsed Drain Currentmax Idm

52A

Fet Type

N-Channel

Power Dissipation Max

31W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

13A

Montaj Tipi

Surface Mount

Rise Time

4ns

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

716pF @ 50V

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Current Continuous Drain Id25

13A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Max Dual Supply Voltage

100V

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Vgsth Max Id

4V @ 12μA

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2