IPD65R660CFDBTMA1

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

40 ns

Yayın Yılı

2011

Number Of Elements

1

Pin Sayısı

3

Current Continuous Drain Id25

6A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Surface Mount

Max Dual Supply Voltage

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

9 ns

Power Dissipation

62.5W

Vgs Max

±20V

Vgsth Max Id

4.5V @ 200μA

Drain Currentmax Abs Id

6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Terminal Sayısı

2

Fet Type

N-Channel

Kurşunsuz Kodu

no

Power Dissipation Max

62.5W Tc

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Last Time Buy

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Continuous Drain Current Id

6A

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Fall Time Typ

10 ns

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

660m Ω @ 2.1A, 10V