IPD65R660CFDAATMA1

Teknik Özellikler

Rise Time

8ns

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

543pF @ 100V

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Jedec95 Code

TO-252AA

Continuous Drain Current Id

6A

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

GULL WING

Fet Type

N-Channel

Power Dissipation Max

62.5W Tc

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

17A

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

9 ns

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Avalanche Energy Rating Eas

115 mJ

Turn Off Delay Time

40 ns

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

660m Ω @ 3.22A, 10V

Fall Time Typ

10 ns

Gate Charge Qg Max Vgs

20nC @ 10V

Drainsource On Resistancemax

0.66Ohm

Terminal Pozisyonu

SINGLE

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Seri

Automotive, AEC-Q101, CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4.5V @ 214.55μA

Drain Currentmax Abs Id

6A

Terminal Sayısı

2

Case Connection

DRAIN

Vgs Max

±20V