IPD65R600E6ATMA1

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Yayın Yılı

2008

Pin Sayısı

4

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

7.3A Tc

Qualification Status

Not Qualified

Case Connection

DRAIN

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Vgsth Max Id

3.5V @ 210μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ E6

Terminal Sayısı

2

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

11 ns

Rds On Max Id Vgs

600m Ω @ 2.1A, 10V

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.6Ohm

Gate Charge Qg Max Vgs

23nC @ 10V

Yükseklik

2.41mm

Drain To Source Breakdown Voltage

700V

Turn Off Delay Time

64 ns

Number Of Elements

1

Avalanche Energy Rating Eas

142 mJ

Transistor Application

SWITCHING

Uzunluk

6.73mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

10 ns

Power Dissipation

63W

Drain To Source Voltage Vdss

650V

Pulsed Drain Currentmax Idm

18A

Fet Type

N-Channel