IPD65R380C6ATMA1

Teknik Özellikler

Terminal Sayısı

2

Drain Currentmax Abs Id

10.6A

Drain To Source Voltage Vdss

650V

Vgsth Max Id

3.5V @ 320μA

Pulsed Drain Currentmax Idm

29A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ C6

JESD-609 Kodu

e3

Power Dissipation Max

83W Tc

Fet Type

N-Channel

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Obsolete

Drainsource On Resistancemax

0.38Ohm

Gate Charge Qg Max Vgs

39nC @ 10V

Input Capacitance Ciss Max Vds

710pF @ 100V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

380m Ω @ 3.2A, 10V

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Yayın Yılı

2008

Jesd30 Code

R-PSSO-G2

RoHS Durumu

RoHS Compliant

Avalanche Energy Rating Eas

215 mJ

Number Of Elements

1

Current Continuous Drain Id25

10.6A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ds Breakdown Voltagemin

650V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES