IPD65R250E6XTMA1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Power Dissipation

208W

Turn On Delay Time

11 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

76 ns

Drain To Source Breakdown Voltage

700V

Avalanche Energy Rating Eas

290 mJ

Number Of Elements

1

Continuous Drain Current Id

16.1A

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Last Time Buy

Input Capacitance Ciss Max Vds

950pF @ 1000V

Ambalaj

Tape & Reel (TR)

Rise Time

9ns

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

46A

Kurşunsuz Kodu

yes

Power Dissipation Max

208W Tc

JESD-609 Kodu

e3

Fet Type

N-Channel

Max Dual Supply Voltage

650V

Montaj

Surface Mount

ECCN Kodu

EAR99

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

16.1A Tc

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

45nC @ 10V