IPD65R250C6XTMA1

Teknik Özellikler

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Jesd30 Code

R-PSSO-G2

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Case Connection

DRAIN

Max Dual Supply Voltage

650V

Current Continuous Drain Id25

16.1A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Halogen Free

Halogen Free

Terminal Sayısı

2

Vgsth Max Id

3.5V @ 400μA

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.25Ohm

Gate Charge Qg Max Vgs

44nC @ 10V

Rds On Max Id Vgs

250m Ω @ 4.4A, 10V

Fall Time Typ

12 ns

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

290 mJ

Number Of Elements

1

Turn Off Delay Time

100 ns

Drain To Source Breakdown Voltage

700V

Turn On Delay Time

13 ns

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Power Dissipation Max

208.3W Tc

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

46A