IPD65R1K0CEAUMA1

Teknik Özellikler

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

650V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Surface Mount

Current Continuous Drain Id25

7.2A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating Eas

50 mJ

Fet Feature

Super Junction

Number Of Elements

1

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

328pF @ 100V

Gate Charge Qg Max Vgs

15.3nC @ 10V

Drainsource On Resistancemax

1Ohm

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

6 Weeks

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1 Ω @ 1.5A, 10V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Continuous Drain Current Id

7.2A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Power Dissipation Max

68W Tc

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Halogen Free

Halogen Free

Terminal Sayısı

2

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)