IPD640N06LGBTMA1

Teknik Özellikler

Ds Breakdown Voltagemin

60V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Parça Durumu

Discontinued

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Gate Charge Qg Max Vgs

13nC @ 10V

Pin Sayısı

4

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain Currentmax Abs Id

18A

Jedec95 Code

TO-252AA

Rds On Max Id Vgs

64m Ω @ 18A, 10V

Pulsed Drain Currentmax Idm

72A

Drainsource On Resistancemax

0.064Ohm

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

60V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

470pF @ 30V

Yayın Yılı

2008

Current Continuous Drain Id25

18A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

43 mJ

Kurşunsuz Kodu

no

JESD-609 Kodu

e3

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~175°C TJ