IPD60R520C6ATMA1

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

3.5V @ 230μA

Power Dissipation Max

66W Tc

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Sayısı

2

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Seri

CoolMOS™ C6

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Avalanche Energy Rating Eas

153 mJ

JESD-609 Kodu

e3

Current Continuous Drain Id25

8.1A Tc

Yayın Yılı

2008

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Rds On Max Id Vgs

520m Ω @ 2.8A, 10V

Pulsed Drain Currentmax Idm

22A

Drainsource On Resistancemax

0.52Ohm

Drain Currentmax Abs Id

8.1A

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

512pF @ 100V

Gate Charge Qg Max Vgs

23.4nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Obsolete

Terminal Formu

GULL WING