IPD60R400CEATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Vgs Max

±20V

Weight

3.949996g

Nem Hassasiyeti (MSL)

3 (168 Hours)

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

32nC @ 10V

Yükseklik

2.55mm

Fall Time Typ

8 ns

Input Capacitance Ciss Max Vds

700pF @ 100V

ECCN Kodu

EAR99

Number Of Channels

1

Max Junction Temperature Tj

150°C

Drainsource On Resistancemax

0.4Ohm

Pulsed Drain Currentmax Idm

30A

Rds On Max Id Vgs

400m Ω @ 3.8A, 10V

Drain To Source Breakdown Voltage

600V

Transistor Application

SWITCHING

Element Configuration

Single

Kurşunsuz

Lead Free

Turn On Delay Time

11 ns

Power Dissipation

112W

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

56 ns

Yayın Yılı

2014

Current Continuous Drain Id25

10.3A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Continuous Drain Current Id

14.7A

Rise Time

9ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Seri

CoolMOS™ CE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Number Of Elements

1