IPD60R3K4CEAUMA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

93pF @ 100V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

650V

Transistor Application

SWITCHING

Rds On Max Id Vgs

3.4 Ω @ 500mA, 10V

Pulsed Drain Currentmax Idm

3.9A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

2.6A Tc

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

4.6nC @ 10V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-40°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Max Dual Supply Voltage

600V

Halogen Free

Halogen Free

Power Dissipation Max

29W Tc

Vgsth Max Id

3.5V @ 40μA

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

6 mJ

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel