IPD60R3K3C6ATMA1

Teknik Özellikler

Gate Charge Qg Max Vgs

4.6nC @ 10V

Yükseklik

2.41mm

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

3.949996g

Vgs Max

±20V

Parça Durumu

Not For New Designs

Yayın Yılı

2008

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Channels

1

Rds On Max Id Vgs

3.3 Ω @ 500mA, 10V

Fabrika Tedarik Süresi

12 Weeks

Seri

CoolMOS™ C6

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Avalanche Energy Rating Eas

6 mJ

Continuous Drain Current Id

1.7A

JESD-609 Kodu

e3

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

18.1W Tc

Terminal Sayısı

2

Fall Time Typ

60 ns

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

30V

Terminal Formu

GULL WING

Current Continuous Drain Id25

1.7A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Uzunluk

6.73mm

Element Configuration

Single

Turn On Delay Time

8 ns

Turn Off Delay Time

40 ns

Pulsed Drain Currentmax Idm

4A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

93pF @ 100V