IPD60R380C6ATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Fall Time Typ

9 ns

Input Capacitance Ciss Max Vds

700pF @ 100V

Transistor Application

SWITCHING

Turn On Delay Time

15 ns

Power Dissipation

83W

Turn Off Delay Time

110 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

10.6A Tc

Rise Time

10ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE

Additional Feature

HIGH VOLTAGE

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

600V

Vgsth Max Id

3.5V @ 320μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

3.949996g

Vgs Max

±20V

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

32nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Number Of Channels

1

Rds On Max Id Vgs

380m Ω @ 3.8A, 10V

Drain To Source Breakdown Voltage

600V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Lead Free

Yayın Yılı

2008

JESD-609 Kodu

e3