IPD60R2K1CEAUMA1

Teknik Özellikler

Gate Charge Qg Max Vgs

6.7nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Parça Durumu

Active

Nem Hassasiyeti (MSL)

3 (168 Hours)

Vgs Max

±20V

Yayın Yılı

2008

Current Continuous Drain Id25

2.3A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

2.1 Ω @ 760mA, 10V

Pulsed Drain Currentmax Idm

6A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

140pF @ 100V

Fabrika Tedarik Süresi

18 Weeks

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ CE

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating Eas

11 mJ

Kurşunsuz Kodu

yes

Continuous Drain Current Id

2.3A

JESD-609 Kodu

e3

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

38W Tc

Vgsth Max Id

3.5V @ 60μA

Halogen Free

Halogen Free

Max Dual Supply Voltage

600V

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C~150°C TJ